Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

Hokuto Seo*, Minoru Tachiki, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

本文言語English
ページ(範囲)4980-4982
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
7 B
DOI
出版ステータスPublished - 2002 7月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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