Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Epitaxial layers of Si _1-x-yGe _xC _y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si _1-x-yGe _xC _y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si _1-x-yGe _xC _y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I ₁ peak with/without I ₁ related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.