TY - JOUR
T1 - Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
AU - Creedon, D. L.
AU - Jiang, Y.
AU - Ganesan, K.
AU - Stacey, A.
AU - Kageura, T.
AU - Kawarada, H.
AU - McCallum, J. C.
AU - Johnson, B. C.
AU - Prawer, S.
AU - Jamieson, D. N.
N1 - Funding Information:
The authors wish to acknowledge that this research is funded by the Australian Research Council under Grant No. DP150102703, and the United States Air Force Research Laboratory under Agreement No. FA2386-13-1-4055. The authors also acknowledge access to ion implantation and/or ion-beam analysis facilities at the ACT node of the Heavy Ion Accelerator Capability funded by the Australian Government under the NCRIS program.
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/10/5
Y1 - 2018/10/5
N2 - Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.
AB - Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.
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U2 - 10.1103/PhysRevApplied.10.044016
DO - 10.1103/PhysRevApplied.10.044016
M3 - Article
AN - SCOPUS:85054549806
SN - 2331-7019
VL - 10
JO - Physical Review Applied
JF - Physical Review Applied
IS - 4
M1 - 044016
ER -