Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

S. Kasai; Y. K. Takahashi; P. H. Cheng; Ikhtiar; T. Ohkubo; K. Kondou; Y. Otani; S. Mitani; K. Hono

doi:10.1063/1.4959144

Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In_0.8Ga_0.2)Se₂ spacer

S. Kasai, Y. K. Takahashi, P. H. Cheng, Ikhtiar, T. Ohkubo, K. Kondou, Y. Otani, S. Mitani, K. Hono

研究成果: Article › 査読

27 被引用数 (Scopus)

抄録

We investigated the structure and magneto-transport properties of magnetic junctions using a Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In_0.8Ga_0.2)Se₂ (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm². Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

本文言語	English
論文番号	032409
ジャーナル	Applied Physics Letters
巻	109
号	3
DOI	https://doi.org/10.1063/1.4959144
出版ステータス	Published - 2016 7月 18
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4959144

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引用スタイル

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title = "Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer",

abstract = "We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.",

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AU - Kasai, S.

AU - Takahashi, Y. K.

AU - Cheng, P. H.

AU - Ikhtiar,

AU - Ohkubo, T.

AU - Kondou, K.

AU - Otani, Y.

AU - Mitani, S.

AU - Hono, K.

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AB - We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

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