Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

T. Tanaka; S. Minagawa; T. Kawano; T. Kajimura

doi:10.1049/el:19890607

Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

T. Tanaka, S. Minagawa, T. Kawano, T. Kajimura

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

本文言語	English
ページ（範囲）	905-907
ページ数	3
ジャーナル	Electronics Letters
巻	25
号	14
DOI	https://doi.org/10.1049/el:19890607
出版ステータス	Published - 1989 7月 6
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19890607

他のファイルとリンク

フィンガープリント

「Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{74584ddb57ac4f73a116c849f1480997,

title = "Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate",

abstract = "The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.",

keywords = "GaAs, Semiconductor devices and materials, Semiconductor lasers",

author = "T. Tanaka and S. Minagawa and T. Kawano and T. Kajimura",

year = "1989",

month = jul,

day = "6",

doi = "10.1049/el:19890607",

language = "English",

volume = "25",

pages = "905--907",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

}

TY - JOUR

T1 - Lasing wavelengths of index-guided aigalnp semiconductor lasers as functions of off-angle from (100) plane of gaas substrate

AU - Tanaka, T.

AU - Minagawa, S.

AU - Kawano, T.

AU - Kajimura, T.

PY - 1989/7/6

Y1 - 1989/7/6

N2 - The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

AB - The lasing wavelengths of AIGalnP semiconductor lasers are investigated as functions of the off-angle in the direction of [110] from the (100) plane of the GaAs substrate. The lasing wavelengths decrease to about 650 nm as the off-angle increases to 10-15°. The influence of the off-angle on the laser transverse mode is also discussed.

KW - GaAs

KW - Semiconductor devices and materials

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0024963120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024963120&partnerID=8YFLogxK

U2 - 10.1049/el:19890607

DO - 10.1049/el:19890607

M3 - Article

AN - SCOPUS:0024963120

SN - 0013-5194

VL - 25

SP - 905

EP - 907

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -