TY - GEN
T1 - Lateral P-channel IGBT on SOI with Double Top RESURF Layers for Emitter Follower Type Complementary IGBT
AU - Zhang, ZIjian
AU - Kazuki, Okita
AU - Kong, Ting
AU - Feng, Zijian
AU - Liu, Suyang
AU - Inuishi, Masahide
N1 - Funding Information:
This work was supported by JST SPRING, Grant Number JPMJSP2128.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This study introduces a new simple double layers RESURF structure for lateral IGBT on SOI which can achieve good SOA and satisfy good switching characteristics in half bridge inverter consisting of an emitter follower type complementary lateral IGBT(EF-CLIGBT) on SOI without complicated dead time setting to avoid the penetration current. The study especially focuses on the improvement of SOA for a p-channel LIGBT due to the difficulty in securing sufficient SOA in comparison with an n-channel LIGBT. The proposed structure can achieve sufficient forward blocking voltage as well as switching characteristics by avoiding the channel pinch-off caused by the junction between the N top RESURF and the P-drift layer. As a result, it is verified that the EF-CLIGBT leg can operate the half bridge inverter successfully without the through current.
AB - This study introduces a new simple double layers RESURF structure for lateral IGBT on SOI which can achieve good SOA and satisfy good switching characteristics in half bridge inverter consisting of an emitter follower type complementary lateral IGBT(EF-CLIGBT) on SOI without complicated dead time setting to avoid the penetration current. The study especially focuses on the improvement of SOA for a p-channel LIGBT due to the difficulty in securing sufficient SOA in comparison with an n-channel LIGBT. The proposed structure can achieve sufficient forward blocking voltage as well as switching characteristics by avoiding the channel pinch-off caused by the junction between the N top RESURF and the P-drift layer. As a result, it is verified that the EF-CLIGBT leg can operate the half bridge inverter successfully without the through current.
KW - double layers
KW - Emitter follower complementary LIGBT
KW - half bridge inverter
KW - SOA of P LIGBT on SOI
UR - http://www.scopus.com/inward/record.url?scp=85134272926&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85134272926&partnerID=8YFLogxK
U2 - 10.1109/ISPSD49238.2022.9813650
DO - 10.1109/ISPSD49238.2022.9813650
M3 - Conference contribution
AN - SCOPUS:85134272926
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 153
EP - 156
BT - 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Y2 - 22 May 2022 through 25 May 2022
ER -