Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan; S. Shitara; N. Tanba; M. Fukumi; T. Yoshimasu

Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan^*, S. Shitara, N. Tanba, M. Fukumi, T. Yoshimasu

^*この研究の対応する著者

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

本文言語	English
ページ	30-31
ページ数	2
出版ステータス	Published - 2000 12月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "Linearity and low-noise performance of SOI MOSFETs for RF applications",

abstract = "The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.",

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AU - Adan, A. O.

AU - Shitara, S.

AU - Tanba, N.

AU - Fukumi, M.

AU - Yoshimasu, T.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

AB - The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

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M3 - Paper

AN - SCOPUS:0034470986

SP - 30

EP - 31

ER -

Linearity and low-noise performance of SOI MOSFETs for RF applications

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ASJC Scopus subject areas

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