Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS

Shinya Sasaki; Takafumi Miyanaga; Takashi Azuhata; Tomoya Uruga; Hajime Tanida; Shigefusa F. Chichibu; Takayuki Sota

doi:10.1063/1.2644572

Local structure around in atoms in In_xGa_1-xN multi-quantum-wells studied by XAFS

Shinya Sasaki^*, Takafumi Miyanaga, Takashi Azuhata, Tomoya Uruga, Hajime Tanida, Shigefusa F. Chichibu, Takayuki Sota

^*この研究の対応する著者

先進理工学部

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in In_xGa_1-xN multi-quantum-well (MQW) structures of 10 periods with In_0.2Ga_0.8N (2.5 nm) and In_0.05Ga_0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) In_xGa_1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the In_xGa_1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

本文言語	English
ホスト出版物のタイトル	X-RAY ABSORPTION FINE STRUCTURE - XAFS13
ホスト出版物のサブタイトル	13th International Conference
ページ	499-501
ページ数	3
DOI	https://doi.org/10.1063/1.2644572
出版ステータス	Published - 2007
イベント	X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States 継続期間: 2006 7月 9 → 2006 7月 14

出版物シリーズ

名前	AIP Conference Proceedings
巻	882
ISSN（印刷版）	0094-243X
ISSN（電子版）	1551-7616

Conference

Conference	X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
国/地域	United States
City	Stanford, CA
Period	06/7/9 → 06/7/14

ASJC Scopus subject areas

生態、進化、行動および分類学
生態学
植物科学
物理学および天文学（全般）
自然保全および景観保全

文献へのアクセス

10.1063/1.2644572

他のファイルとリンク

引用スタイル

Sasaki, S, Miyanaga, T, Azuhata, T, Uruga, T, Tanida, H, Chichibu, SF & Sota, T 2007, Local structure around in atoms in In_xGa_1-xN multi-quantum-wells studied by XAFS. in X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference. AIP Conference Proceedings, vol. 882, pp. 499-501, X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference, Stanford, CA, United States, 06/7/9. https://doi.org/10.1063/1.2644572

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title = "Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS",

abstract = "Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.",

keywords = "EXAFS, InGaN, LED, Multiple-quantum-well",

author = "Shinya Sasaki and Takafumi Miyanaga and Takashi Azuhata and Tomoya Uruga and Hajime Tanida and Chichibu, {Shigefusa F.} and Takayuki Sota",

year = "2007",

doi = "10.1063/1.2644572",

language = "English",

isbn = "0735403848",

series = "AIP Conference Proceedings",

pages = "499--501",

booktitle = "X-RAY ABSORPTION FINE STRUCTURE - XAFS13",

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T1 - Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS

AU - Sasaki, Shinya

AU - Miyanaga, Takafumi

AU - Azuhata, Takashi

AU - Uruga, Tomoya

AU - Tanida, Hajime

AU - Chichibu, Shigefusa F.

AU - Sota, Takayuki

PY - 2007

Y1 - 2007

N2 - Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

AB - Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

KW - EXAFS

KW - InGaN

KW - LED

KW - Multiple-quantum-well

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M3 - Conference contribution

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SN - 0735403848

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T3 - AIP Conference Proceedings

SP - 499

EP - 501

BT - X-RAY ABSORPTION FINE STRUCTURE - XAFS13

T2 - X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference

Y2 - 9 July 2006 through 14 July 2006

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