Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

S. L. Lu; L. F. Bian; M. Uesugi; H. Nosho; A. Tackeuchi; Z. C. Niu

doi:10.1063/1.2841041

Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

S. L. Lu^*, L. F. Bian, M. Uesugi, H. Nosho, A. Tackeuchi, Z. C. Niu

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

7 被引用数 (Scopus)

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We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.

本文言語	English
論文番号	051908
ジャーナル	Applied Physics Letters
巻	92
号	5
DOI	https://doi.org/10.1063/1.2841041
出版ステータス	Published - 2008

ASJC Scopus subject areas

物理学および天文学（その他）

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title = "Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well",

abstract = "We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.",

author = "Lu, {S. L.} and Bian, {L. F.} and M. Uesugi and H. Nosho and A. Tackeuchi and Niu, {Z. C.}",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 18360042), the 21st Century COE Program (Physics of Self-Organization Systems), Academic Frontier Project and the High-Tech Research Center Project from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and by a Waseda University Grant for Special Research Projects (2007B-094). L. F. Bian also thanks the support from DAAD-K. C. Wong fellowship.",

year = "2008",

doi = "10.1063/1.2841041",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

AU - Lu, S. L.

AU - Bian, L. F.

AU - Uesugi, M.

AU - Nosho, H.

AU - Tackeuchi, A.

AU - Niu, Z. C.

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (Grant No. 18360042), the 21st Century COE Program (Physics of Self-Organization Systems), Academic Frontier Project and the High-Tech Research Center Project from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and by a Waseda University Grant for Special Research Projects (2007B-094). L. F. Bian also thanks the support from DAAD-K. C. Wong fellowship.

PY - 2008

Y1 - 2008

N2 - We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.

AB - We have investigated the exciton spin relaxation in a GaInNAsGaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.

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DO - 10.1063/1.2841041

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SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051908

ER -

Localized and free exciton spin relaxation dynamics in GaInNAsGaAs quantum well

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