Low-driving-voltage band-operation LiNbO3 modulator with lightwave reflection and double-stub structure

T. Kawanishi; S. Oikawa; K. Higuma; Y. Matsuo; M. Izutsu

doi:10.1049/el:20020802

Low-driving-voltage band-operation LiNbO₃ modulator with lightwave reflection and double-stub structure

T. Kawanishi^*, S. Oikawa, K. Higuma, Y. Matsuo, M. Izutsu

^*この研究の対応する著者

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

A reflection-type Mach-Zehnder LiNbO₃ optical modulator with a double-stub structure that can modulate both forward and backward lightwave to achieve low-driving-voltage optical modulation for band-operation is developed. Using optical reflection the modulation efficiency is doubled. The halfwave-voltage of the fabricated modulator was 2.9 V at 7 GHz.

本文言語	English
ページ（範囲）	1204-1205
ページ数	2
ジャーナル	Electronics Letters
巻	38
号	20
DOI	https://doi.org/10.1049/el:20020802
出版ステータス	Published - 2002 9月 26
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:20020802

他のファイルとリンク

引用スタイル

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abstract = "A reflection-type Mach-Zehnder LiNbO3 optical modulator with a double-stub structure that can modulate both forward and backward lightwave to achieve low-driving-voltage optical modulation for band-operation is developed. Using optical reflection the modulation efficiency is doubled. The halfwave-voltage of the fabricated modulator was 2.9 V at 7 GHz.",

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AU - Izutsu, M.

PY - 2002/9/26

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AB - A reflection-type Mach-Zehnder LiNbO3 optical modulator with a double-stub structure that can modulate both forward and backward lightwave to achieve low-driving-voltage optical modulation for band-operation is developed. Using optical reflection the modulation efficiency is doubled. The halfwave-voltage of the fabricated modulator was 2.9 V at 7 GHz.

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