Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Xin Yang; Yorikatsu Uchida; Qing Liu; Toshihiko Yoshimasu

doi:10.1109/IMWS2.2012.6338206

Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Xin Yang^*, Yorikatsu Uchida, Qing Liu, Toshihiko Yoshimasu

^*この研究の対応する著者

大学院情報生産システム研究科

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper presents a low operation voltage ultrawideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

本文言語	English
ホスト出版物のタイトル	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
ページ	52-55
ページ数	4
DOI	https://doi.org/10.1109/IMWS2.2012.6338206
出版ステータス	Published - 2012 12月 20
イベント	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing, China 継続期間: 2012 9月 18 → 2012 9月 20

出版物シリーズ

名前	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

Conference

Conference	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
国/地域	China
City	Nanjing
Period	12/9/18 → 12/9/20

ASJC Scopus subject areas

コンピュータネットワークおよび通信

文献へのアクセス

10.1109/IMWS2.2012.6338206

他のファイルとリンク

引用スタイル

Yang, X., Uchida, Y., Liu, Q., & Yoshimasu, T. (2012). Low-power ultra-wideband power detector IC in 130 nm CMOS technology. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding (pp. 52-55). Article 6338206 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). https://doi.org/10.1109/IMWS2.2012.6338206

Low-power ultra-wideband power detector IC in 130 nm CMOS technology. / Yang, Xin; Uchida, Yorikatsu; Liu, Qing その他.
IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 52-55 6338206 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

研究成果: Conference contribution

Yang, X, Uchida, Y, Liu, Q & Yoshimasu, T 2012, Low-power ultra-wideband power detector IC in 130 nm CMOS technology. in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding., 6338206, IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding, pp. 52-55, 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012, Nanjing, China, 12/9/18. https://doi.org/10.1109/IMWS2.2012.6338206

Yang X, Uchida Y, Liu Q, Yoshimasu T. Low-power ultra-wideband power detector IC in 130 nm CMOS technology. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 52-55. 6338206. (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). doi: 10.1109/IMWS2.2012.6338206

Yang, Xin ; Uchida, Yorikatsu ; Liu, Qing その他. / Low-power ultra-wideband power detector IC in 130 nm CMOS technology. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. pp. 52-55 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

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Low-power ultra-wideband power detector IC in 130 nm CMOS technology

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