Low pressure CVD for wide area diamond film deposition at low temperature

Akio Hiraki*, Hiroshi Kawarada, Jin Wei, Jing Sheng Ma, Jun ichi Suzuki


研究成果: Conference article査読

1 被引用数 (Scopus)


We have applied magneto-microwave plasma to be successful, for the first time, in deposition of diamond at far lower pressure than the conventional high pressure plasma CVD. The important point of the low pressure plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2.45 GHz microwave) at the deposition area. The high density plasma (above 1×1011 /cm3) necessary for high quality diamond formation has been obtained by the effective microwave absorption near the magnetic field satisfying the ECR condition. The plasma is quite uniform at the discharge area (160 mm in diameter) and uniform diamond films with high quality have been obtained. From the investigation of diamond formation from 50 Torr to 10-2 Torr in the same deposition system, it is definite that the lower pressure lowers the formation temperature of diamond to 500°C and the effective species for diamond formation are low energy radicals.

ジャーナルProceedings of SPIE - The International Society for Optical Engineering
出版ステータスPublished - 1990
イベントDiamond Optics III - San Diego, CA, USA
継続期間: 1990 7月 91990 7月 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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