Low-pressure diamond nucleation and growth on Cu substrate

Shin Ichi Ojika, Satoshi Yamashita, Kazuhiro Kataoka, Takefumi Ishikura, Akira Yamaguchi, Hiroshi Kawarada

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.

本文言語English
ページ(範囲)L200-L203
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
32
2 A
DOI
出版ステータスPublished - 1993

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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