We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1993|
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