TY - GEN
T1 - Low temperature Au-Au flip chip bonding with VUV/O 3 treatment for 3D integration
AU - Okada, Akiko
AU - Nimura, Masatsugu
AU - Unami, Naoko
AU - Shigetou, Akitsu
AU - Noma, Hirokazu
AU - Sakuma, Katsuyuki
AU - Shoji, Shuichi
AU - Mizuno, Jun
PY - 2012
Y1 - 2012
N2 - This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.
AB - This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.
UR - http://www.scopus.com/inward/record.url?scp=84864831233&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864831233&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D.2012.6238082
DO - 10.1109/LTB-3D.2012.6238082
M3 - Conference contribution
AN - SCOPUS:84864831233
SN - 9781467307420
T3 - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
SP - 171
BT - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
T2 - 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Y2 - 22 May 2012 through 23 May 2012
ER -