Low-temperature bonding of a LiNbO3 waveguide chip to a Si substrate in ambient air for hybrid-integrated optical devices

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi


研究成果: Conference contribution

2 被引用数 (Scopus)


We report the low-temperature bonding of a lithium niobate (LiNbO 3) chip with gold (Au) thin film to a silicon (Si) substrate with patterned Au film for hybrid-integrated optical devices. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the Au thin film (thickness: 500 nm) on the LiNbO3 chip (6 mm by 6 mm) and the patterned Au film (thickness: 2 μm) on the Si substrate (12 mm by 12 mm) were cleaned by using argon (Ar) radio-frequency (RF) plasma, Au-Au bonding was carried out in ambient air with applied static pressure (̃50 kgf). The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (< 100 °C). However, when the bonding temperature was increased to be greater than 150 °C, the LiNbO3 chips cracked during bonding. The tensile strength (calculated by dividing the total cross-sectional area of the initial, undeformed micropatterns) of the interface was estimated to be about 70 MPa (bonding temperature: 100 °C). It was sufficient for use in optical applications. These results show the potential for producing highly functional optical devices and for low-cost packaging of LiNbO3 devices.

ホスト出版物のタイトルOptomechatronic Micro/Nano Devices and Components II
出版ステータスPublished - 2006 12月 1
イベントOptomechatronic Micro/Nano Devices and Components II - Boston, MA, United States
継続期間: 2006 10月 32006 10月 4


名前Proceedings of SPIE - The International Society for Optical Engineering


OtherOptomechatronic Micro/Nano Devices and Components II
国/地域United States
CityBoston, MA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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