Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

K. S. Seol; H. Hiramatsu; Y. Ohki; D. S. Shin; I. H. Choi; Y. T. Kim

Low temperature crystallization of SrBi₂Ta₂O₉ film by excimer laser irradiation

K. S. Seol^*, H. Hiramatsu, Y. Ohki, D. S. Shin, I. H. Choi, Y. T. Kim

^*この研究の対応する著者

先進理工学部

研究成果: Conference article › 査読

3 被引用数 (Scopus)

抄録

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi₂Ta₂O₉ films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

本文言語	English
ページ（範囲）	293-298
ページ数	6
ジャーナル	Materials Research Society Symposium - Proceedings
巻	541
出版ステータス	Published - 1999 1月 1
イベント	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA 継続期間: 1998 11月 30 → 1998 12月 3

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

他のファイルとリンク

引用スタイル

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title = "Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation",

abstract = "Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.",

author = "Seol, {K. S.} and H. Hiramatsu and Y. Ohki and Shin, {D. S.} and Choi, {I. H.} and Kim, {Y. T.}",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "541",

pages = "293--298",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

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TY - JOUR

T1 - Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

AU - Seol, K. S.

AU - Hiramatsu, H.

AU - Ohki, Y.

AU - Shin, D. S.

AU - Choi, I. H.

AU - Kim, Y. T.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

AB - Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032592328&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032592328

SN - 0272-9172

VL - 541

SP - 293

EP - 298

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

抄録

ASJC Scopus subject areas

他のファイルとリンク

フィンガープリント

引用スタイル

Low temperature crystallization of SrBi₂Ta₂O₉ film by excimer laser irradiation