抄録
A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.
| 本文言語 | English |
|---|---|
| 論文番号 | 055127 |
| ジャーナル | AIP Advances |
| 巻 | 9 |
| 号 | 5 |
| DOI | |
| 出版ステータス | Published - 2019 5月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）