Low-temperature grown quaternary Heusler-compound Co2Mn 1-xFexSi films on Ge(111)

S. Yamada; K. Hamaya; T. Murakami; B. Varaprasad; Y. K. Takahashi; A. Rajanikanth; K. Hono; M. Miyao

doi:10.1063/1.3563039

Low-temperature grown quaternary Heusler-compound Co₂Mn _1-xFe_xSi films on Ge(111)

S. Yamada^*, K. Hamaya, T. Murakami, B. Varaprasad, Y. K. Takahashi, A. Rajanikanth, K. Hono, M. Miyao

^*この研究の対応する著者

研究成果: Article › 査読

26 被引用数 (Scopus)

抄録

Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

本文言語	English
論文番号	07B113
ジャーナル	Journal of Applied Physics
巻	109
号	7
DOI	https://doi.org/10.1063/1.3563039
出版ステータス	Published - 2011 4月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.3563039

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title = "Low-temperature grown quaternary Heusler-compound Co2Mn 1-xFexSi films on Ge(111)",

abstract = "Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.",

author = "S. Yamada and K. Hamaya and T. Murakami and B. Varaprasad and Takahashi, {Y. K.} and A. Rajanikanth and K. Hono and M. Miyao",

note = "Funding Information: This work was partly supported by CREST from Japan Science and Technology Agency (JST), Industrial Technology Research Grant Program from NEDO, PRESTO from JST, and a research granted from The Murata Science Foundation.",

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AU - Yamada, S.

AU - Hamaya, K.

AU - Murakami, T.

AU - Varaprasad, B.

AU - Takahashi, Y. K.

AU - Rajanikanth, A.

AU - Hono, K.

AU - Miyao, M.

N1 - Funding Information: This work was partly supported by CREST from Japan Science and Technology Agency (JST), Industrial Technology Research Grant Program from NEDO, PRESTO from JST, and a research granted from The Murata Science Foundation.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

AB - Highly ordered quaternary Co 2 Mn 1 - x Fe x Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 ° C. Also, L 2 1 -ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co 2 Mn 0.5 Fe 0.5 Si films is estimated to be P = 0.58 ± 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

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