TY - JOUR
T1 - Low-temperature operation of diamond surface-channel field-effect transistors
AU - Tachiki, Minoru
AU - Ishizaka, Hiroaki
AU - Banno, Tokishige
AU - Sakai, Toshikatsu
AU - Song, Kwang Soup
AU - Umezawa, Hitoshi
AU - Kawarada, Hiroshi
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.
AB - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.
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M3 - Conference article
AN - SCOPUS:0036450195
SN - 0272-9172
VL - 719
SP - 139
EP - 143
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Defect and Impunity Engineered Semiconductors and Devices III
Y2 - 1 April 2002 through 5 April 2002
ER -