TY - JOUR
T1 - Low temperature oxidation processing with high purity ozone
AU - Kurokawa, A.
AU - Ichimura, S.
AU - Kang, H. J.
AU - Moon, D. W.
PY - 1996
Y1 - 1996
N2 - To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.
AB - To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.
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U2 - 10.1557/proc-429-269
DO - 10.1557/proc-429-269
M3 - Conference article
AN - SCOPUS:0030409085
SN - 0272-9172
VL - 429
SP - 269
EP - 274
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 12 April 1996
ER -