Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi; Akira Nakano; Shuichi Shoji; Hiroyuki Hebiguchi

doi:10.1016/0924-4247(90)87062-N

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi^*, Akira Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

^*この研究の対応する著者

研究成果: Article › 査読

18 被引用数 (Scopus)

抄録

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

本文言語	English
ページ（範囲）	931-934
ページ数	4
ジャーナル	Sensors and Actuators: A. Physical
巻	23
号	1-3
DOI	https://doi.org/10.1016/0924-4247(90)87062-N
出版ステータス	Published - 1990 4月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
器械工学
凝縮系物理学
表面、皮膜および薄膜
金属および合金
電子工学および電気工学

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10.1016/0924-4247(90)87062-N

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abstract = "Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.",

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Y1 - 1990/4

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AB - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

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Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

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