Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

Jin Wei; Hiroshi Kawarada; Jun Ichi Suzuki; Akio Hiraki

doi:10.1143/JJAP.29.L1483

Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

Jin Wei^*, Hiroshi Kawarada, Jun Ichi Suzuki, Akio Hiraki

^*この研究の対応する著者

研究成果: Article › 査読

29 被引用数 (Scopus)

抄録

At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×10₁₁cm_-3) at ECR condition. Above 1×10₁₁cm_-3, using a (CH₄+CO₂)/H₂mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

本文言語	English
ページ（範囲）	L1483-L1485
ジャーナル	Japanese journal of applied physics
巻	29
号	8
DOI	https://doi.org/10.1143/JJAP.29.L1483
出版ステータス	Published - 1990 8月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.29.L1483

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title = "Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD",

abstract = "At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.",

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author = "Jin Wei and Hiroshi Kawarada and Suzuki, {Jun Ichi} and Akio Hiraki",

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AU - Wei, Jin

AU - Kawarada, Hiroshi

AU - Suzuki, Jun Ichi

AU - Hiraki, Akio

PY - 1990/8

Y1 - 1990/8

N2 - At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

AB - At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

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KW - Diamond film

KW - Double probe

KW - Ecr

KW - Plasma density

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Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

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