TY - JOUR
T1 - Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes
AU - Zhong, Guofang
AU - Iwasaki, Takayuki
AU - Honda, Kotaro
AU - Furukawa, Yukio
AU - Ohdomari, Iwao
AU - Kawarada, Hiroshi
PY - 2005/4
Y1 - 2005/4
N2 - A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.
AB - A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.
KW - Catalyst
KW - Chemical vapor deposition
KW - Low-temperature deposition
KW - Point-arc microwave plasma
KW - Single-walled carbon nanotubes
KW - Vertical alignment
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U2 - 10.1143/JJAP.44.1558
DO - 10.1143/JJAP.44.1558
M3 - Article
AN - SCOPUS:21244453150
SN - 0021-4922
VL - 44
SP - 1558
EP - 1561
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4 A
ER -