Low-voltage organic field-effect transistors with a gate insulator of Ta2O5 formed by sputtering

Heisuke Sakai; Yukio Furukawa; Eiichi Fujiwara; Hirokazu Tada

doi:10.1246/cl.2004.1172

Low-voltage organic field-effect transistors with a gate insulator of Ta₂O₅ formed by sputtering

Heisuke Sakai, Yukio Furukawa^*, Eiichi Fujiwara, Hirokazu Tada

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

The Ta₂O₅ film prepared on silicon by RF sputtering has been used as a gate insulator for the top-contact field-effect transistors fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) or pentacene. Good transistor characteristics have been obtained with saturation at low drive voltages (about -3 V) and with hole mobilities of 5.2 × 10^-4 cm²/Vs (MEH-PPV) and 0.8 cm²/Vs (pentacene).

本文言語	English
ページ（範囲）	1172-1173
ページ数	2
ジャーナル	Chemistry Letters
巻	33
号	9
DOI	https://doi.org/10.1246/cl.2004.1172
出版ステータス	Published - 2004 9月 5

ASJC Scopus subject areas

化学 (全般)

文献へのアクセス

10.1246/cl.2004.1172

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引用スタイル

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