TY - JOUR
T1 - MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloys
AU - Kobayashi, M.
AU - Setiagung, C.
AU - Wakao, K.
AU - Nakamura, S.
AU - Yoshikawa, A.
AU - Takahashi, K.
PY - 1998
Y1 - 1998
N2 - ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.
AB - ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.
KW - Electrical Properties
KW - LED
KW - MBE
KW - ZnMgSTe
KW - ZnSTe
UR - http://www.scopus.com/inward/record.url?scp=11544277827&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11544277827&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)80295-9
DO - 10.1016/S0022-0248(98)80295-9
M3 - Article
AN - SCOPUS:11544277827
SN - 0022-0248
VL - 184-185
SP - 66
EP - 69
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -