MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu; Wei Che Sun; Sotaro Yamashita; Takayuki Aiba; Kosuke Taguri; Masakazu Kobayashi; Toshiaki Asahi; Hiroyoshi Togo

doi:10.1002/pssc.201300582

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu^*, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

本文言語	English
ページ（範囲）	1182-1185
ページ数	4
ジャーナル	Physica Status Solidi (C) Current Topics in Solid State Physics
巻	11
号	7-8
DOI	https://doi.org/10.1002/pssc.201300582
出版ステータス	Published - 2014 7月

ASJC Scopus subject areas

凝縮系物理学

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10.1002/pssc.201300582

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title = "MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates",

abstract = "ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.",

keywords = "Heteroepitaxy, Molecular beam epitaxy, Pole figure, Sapphire, ZnTe",

author = "Taizo Nakasu and Sun, {Wei Che} and Sotaro Yamashita and Takayuki Aiba and Kosuke Taguri and Masakazu Kobayashi and Toshiaki Asahi and Hiroyoshi Togo",

year = "2014",

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T1 - MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

AU - Nakasu, Taizo

AU - Sun, Wei Che

AU - Yamashita, Sotaro

AU - Aiba, Takayuki

AU - Taguri, Kosuke

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

AU - Togo, Hiroyoshi

PY - 2014/7

Y1 - 2014/7

N2 - ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

AB - ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

KW - Heteroepitaxy

KW - Molecular beam epitaxy

KW - Pole figure

KW - Sapphire

KW - ZnTe

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MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

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