MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

D. C. Grillo*, W. Xie, M. Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

本文言語English
ページ(範囲)441-444
ページ数4
ジャーナルJournal of Electronic Materials
22
5
DOI
出版ステータスPublished - 1993 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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