TY - JOUR
T1 - MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors
AU - Ueno, J.
AU - Ogura, K.
AU - Ichiba, A.
AU - Katsuta, S.
AU - Kobayashi, M.
AU - Onomitsu, K.
AU - Horikoshi, Y.
PY - 2006
Y1 - 2006
N2 - ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.
AB - ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.
UR - http://www.scopus.com/inward/record.url?scp=33646198160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646198160&partnerID=8YFLogxK
U2 - 10.1002/pssc.200564728
DO - 10.1002/pssc.200564728
M3 - Conference article
AN - SCOPUS:33646198160
SN - 1610-1634
VL - 3
SP - 1225
EP - 1228
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 4
T2 - 12th International Conference on II-VI Compounds
Y2 - 12 September 2005 through 16 September 2005
ER -