Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang; Yang Ju; Atsushi Hosoi; Akifumi Fujimoto

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju^*, Atsushi Hosoi, Akifumi Fujimoto

^*この研究の対応する著者

研究成果: Conference contribution

抄録

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO₂) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO₂) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

本文言語	English
ホスト出版物のタイトル	DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
ページ	334-338
ページ数	5
出版ステータス	Published - 2011 12月 1
外部発表	はい
イベント	2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence, France 継続期間: 2011 5月 11 → 2011 5月 13

出版物シリーズ

名前	DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Conference

Conference	2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
国/地域	France
City	Aix-en-Provence
Period	11/5/11 → 11/5/13

ASJC Scopus subject areas

ハードウェアとアーキテクチャ

他のファイルとリンク

引用スタイル

Zhang, L, Ju, Y, Hosoi, A & Fujimoto, A 2011, Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. in DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS., 6108014, DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, pp. 334-338, 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011, Aix-en-Provence, France, 11/5/11.

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abstract = "The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.",

author = "Lan Zhang and Yang Ju and Atsushi Hosoi and Akifumi Fujimoto",

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AU - Zhang, Lan

AU - Ju, Yang

AU - Hosoi, Atsushi

AU - Fujimoto, Akifumi

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

AB - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

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M3 - Conference contribution

AN - SCOPUS:84881056397

SN - 9782355000133

T3 - DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

SP - 334

EP - 338

BT - DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

T2 - 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011

Y2 - 11 May 2011 through 13 May 2011

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Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

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出版物シリーズ

Conference

ASJC Scopus subject areas

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