We have developed a membrane buried-heterostructure (BH) distributed feedback (DFB) laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230-nm-thick membrane III-V layer enables us to construct an optical supermode in a 220-nm-thick Si waveguide and control the optical confinement factor in both the III-V and Si layers by changing Si waveguide width. This makes it possible to use a conventional Si photonics platform because the Si waveguides widely used on it are around 220-nm thick. To fabricate the BH—the key component for constructing a membrane laser with a lateral current-injection structure—we used direct wafer bonding and regrowth by metalorganic vapor phase epitaxy. Light output from the DFB laser is transferred to the Si waveguide through a short inverse-taper InP waveguide. A fiber-chip interface constructed by using inverse-taper Si waveguides and SiOx waveguides provides 2-dB fiber coupling loss. Fiber coupling power of 7.9 mW is obtained with a λ/4-shifted DFB laser with a 500-µm-long cavity. Single-mode lasing with a side-mode suppression ratio of 50 dB and lasing up to 120°C are also demonstrated.
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