Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate

Hidetaka Nishi; Takuro Fujii; Koji Takeda; Koichi Hasebe; Takaaki Kakitsuka; Tai Tsuchizawa; Tsuyoshi Yamamoto; Koji Yamada; Shinji Matsuo

doi:10.1364/OE.24.018346

Membrane distributed-reflector laser integrated with SiO_x-based spot-size converter on Si substrate

Hidetaka Nishi, Takuro Fujii, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Tai Tsuchizawa, Tsuyoshi Yamamoto, Koji Yamada, Shinji Matsuo

研究成果: Article › 査読

45 被引用数 (Scopus)

抄録

We demonstrate monolithic integration of a 50-μm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiO_x waveguide, on SiO₂/Si substrate. The device exhibits 9.4-GHz/mA^0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.

本文言語	English
ページ（範囲）	18346-18352
ページ数	7
ジャーナル	Optics Express
巻	24
号	16
DOI	https://doi.org/10.1364/OE.24.018346
出版ステータス	Published - 2016 8月 8
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

文献へのアクセス

10.1364/OE.24.018346

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引用スタイル

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abstract = "We demonstrate monolithic integration of a 50-μm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.",

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AU - Tsuchizawa, Tai

AU - Yamamoto, Tsuyoshi

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