Memory design using one-transistor gain cell on SOI

Takashi Ohsawa; Katsuyuki Fujita; Tomoki Higashi; Yoshihisa Iwata; Takeshi Kajiyama; Yoshiaki Asao; Kazumasa Sunouchi

Memory design using one-transistor gain cell on SOI

Takashi Ohsawa^*, Katsuyuki Fujita, Tomoki Higashi, Yoshihisa Iwata, Takeshi Kajiyama, Yoshiaki Asao, Kazumasa Sunouchi

^*この研究の対応する著者

研究成果: Conference article › 査読

37 被引用数 (Scopus)

抄録

Memory design was carried out using one-transistor gain cell on SOI. This memory design is based on a one-transistor gain cell which is smaller, less complex to make and more scalable to sub-0.1μm generations than the existing dynamic random access memory (DRAM) cells, without resorting to new materials and device structure. Transient analysis of a device simulation was also discussed to verify operation of the floating body transistor cell (FBC).

本文言語	English
ページ（範囲）	152-153+454+151
ジャーナル	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
出版ステータス	Published - 2002 1月 1
外部発表	はい
イベント	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States 継続期間: 2002 2月 3 → 2002 2月 7

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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引用スタイル

@article{b5df93f7283f488b9fbef876f5708f73,

title = "Memory design using one-transistor gain cell on SOI",

abstract = "Memory design was carried out using one-transistor gain cell on SOI. This memory design is based on a one-transistor gain cell which is smaller, less complex to make and more scalable to sub-0.1μm generations than the existing dynamic random access memory (DRAM) cells, without resorting to new materials and device structure. Transient analysis of a device simulation was also discussed to verify operation of the floating body transistor cell (FBC).",

author = "Takashi Ohsawa and Katsuyuki Fujita and Tomoki Higashi and Yoshihisa Iwata and Takeshi Kajiyama and Yoshiaki Asao and Kazumasa Sunouchi",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "152--153+454+151",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

TY - JOUR

T1 - Memory design using one-transistor gain cell on SOI

AU - Ohsawa, Takashi

AU - Fujita, Katsuyuki

AU - Higashi, Tomoki

AU - Iwata, Yoshihisa

AU - Kajiyama, Takeshi

AU - Asao, Yoshiaki

AU - Sunouchi, Kazumasa

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Memory design was carried out using one-transistor gain cell on SOI. This memory design is based on a one-transistor gain cell which is smaller, less complex to make and more scalable to sub-0.1μm generations than the existing dynamic random access memory (DRAM) cells, without resorting to new materials and device structure. Transient analysis of a device simulation was also discussed to verify operation of the floating body transistor cell (FBC).

AB - Memory design was carried out using one-transistor gain cell on SOI. This memory design is based on a one-transistor gain cell which is smaller, less complex to make and more scalable to sub-0.1μm generations than the existing dynamic random access memory (DRAM) cells, without resorting to new materials and device structure. Transient analysis of a device simulation was also discussed to verify operation of the floating body transistor cell (FBC).

UR - http://www.scopus.com/inward/record.url?scp=0036104766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036104766&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036104766

SN - 0193-6530

SP - 152-153+454+151

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

Memory design using one-transistor gain cell on SOI

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ASJC Scopus subject areas

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