抄録
THIS STUDY WAS CONCERNED WITH THE DEVELOPMENT OF A PROCESS FOR THE DEPOSITION OF THIN-FILMS FROM A MICROWAVE PLASMA OF SEMICONDUCTOR MATERIALS. A COAXIAL LINE TYPE MICROWAVE CW DISCHARGE WAS USED TO CREATE UNIFORM PLASMAS, AND A-SI FILMS WERE FABRICATED FROM AR GAS CONTAINING 10PSIH//4. THE X-RAY DIFFRACTION PATTERNS SHOWED THAT THE FABRICATED FILMS, WHERE THE MICROWAVE POWER IS LARGE, ARE CRYSTALLIZED AND THE STRUCTURE OF THE OTHER FILMS IS AMORPHOUS. THE RESULTS ARE APPLICABLE TO SOLAR CELL MANUFACTURE.
本文言語 | English |
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ホスト出版物のタイトル | Jpn J Appl Phys Part 2 |
ページ | 470-472 |
ページ数 | 3 |
巻 | V 21 |
版 | N 8 |
出版ステータス | Published - 1982 8月 |
ASJC Scopus subject areas
- 工学(全般)