抄録
This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 22 |
| 版 | 1 |
| 出版ステータス | Published - 1983 1月 |
ASJC Scopus subject areas
- 工学（全般）