TY - JOUR
T1 - Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire
AU - Nakasu, Taizo
AU - Kobayashi, Masakazu
AU - Asahi, Toshiaki
AU - Togo, Hiroyoshi
PY - 2014/1
Y1 - 2014/1
N2 - ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.
AB - ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.
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U2 - 10.7567/JJAP.53.015502
DO - 10.7567/JJAP.53.015502
M3 - Article
AN - SCOPUS:84892399230
SN - 0021-4922
VL - 53
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 1
M1 - 015502
ER -