Molecular beam epitaxy of gap and GaAs_1−xP_x

GaP and GaAs_1−xP_x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs_1−xP_x is dependent on the substrate temperature, T_s, and the intensity ratio P/As. The rate of decrease,-dx/dT_s, is found to be 0.003 °C⁻¹ for the entire composition-ratio range.