Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine; S. M. Durbin; R. L. Gunshor; M. Kobayashi; D. R. Menke; J. Gonsalves; N. Otsuka; Q. Fu; M. Hagerott; A. V. Nurmikko

doi:10.1016/0039-6028(90)90324-2

Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine^*, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

^*この研究の対応する著者

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

本文言語	English
ページ（範囲）	344-346
ページ数	3
ジャーナル	Surface Science
巻	228
号	1-3
DOI	https://doi.org/10.1016/0039-6028(90)90324-2
出版ステータス	Published - 1990 4月 1
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/0039-6028(90)90324-2

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@article{4f4b59fd321040b4928174e47525b8bd,

title = "Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb",

abstract = "The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.",

author = "Mathine, {D. L.} and Durbin, {S. M.} and Gunshor, {R. L.} and M. Kobayashi and Menke, {D. R.} and J. Gonsalves and N. Otsuka and Q. Fu and M. Hagerott and Nurmikko, {A. V.}",

note = "Funding Information: The authors would like to acknowledge L.A. Kolodziejski for contributions to the growth of ZnTe, and thank Z. Pei, R. Venkatasubramanian, D. Lubelski, Y.R. Lee, and A.K. Ramdas for their participation in this project. Research support was provided by DARPA/ONR URI contract N00014-86-K0760, AFOSR grant AFOSR-8% 0185. National Science Foundation (NSF)-MRG Grant DMR-8520866, and NSF Equipment grant ECS-8606241.",

year = "1990",

month = apr,

day = "1",

doi = "10.1016/0039-6028(90)90324-2",

language = "English",

volume = "228",

pages = "344--346",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

AU - Mathine, D. L.

AU - Durbin, S. M.

AU - Gunshor, R. L.

AU - Kobayashi, M.

AU - Menke, D. R.

AU - Gonsalves, J.

AU - Otsuka, N.

AU - Fu, Q.

AU - Hagerott, M.

AU - Nurmikko, A. V.

N1 - Funding Information: The authors would like to acknowledge L.A. Kolodziejski for contributions to the growth of ZnTe, and thank Z. Pei, R. Venkatasubramanian, D. Lubelski, Y.R. Lee, and A.K. Ramdas for their participation in this project. Research support was provided by DARPA/ONR URI contract N00014-86-K0760, AFOSR grant AFOSR-8% 0185. National Science Foundation (NSF)-MRG Grant DMR-8520866, and NSF Equipment grant ECS-8606241.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

AB - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=33747222687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747222687&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90324-2

DO - 10.1016/0039-6028(90)90324-2

M3 - Article

AN - SCOPUS:33747222687

SN - 0039-6028

VL - 228

SP - 344

EP - 346

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

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