TY - GEN
T1 - Molecular dynamics simulation of heat transport in silicon fin structures
AU - Zushi, T.
AU - Watanabe, T.
AU - Ohmori, K.
AU - Yamada, K.
N1 - Funding Information:
This work is supported by CREST program Science and Technology Agency (JST).
Publisher Copyright:
© 2012 IEEE.
PY - 2012
Y1 - 2012
N2 - A series of molecular dynamics (MD) simulations has been conducted to investigate the transport process of heat from a heat source consisting only longitudinal optical (LO) phonon in Bulk and SOI Fin structures. The calculation results show that the heat transport from the Fin to the Si substrate is delayed when the buried oxide (BOX) layer exists even if the thickness is only one atomic layer. The kinetic energy distributions of LO and longitudinal acoustic (LA) phonons in SOI Fin structures are extracted from the MD simulations, and the result suggests that the heat transport process is impeded since acoustic phonon stays near the SiO2/Si interface. That is, the retarded heat is an unavoidable in a SOI Fin, a nanowire, or any channel structure confined in an insulating material. Having a heat duct in a device can be effective to avoid the self-heating problem for advanced transistor structures.
AB - A series of molecular dynamics (MD) simulations has been conducted to investigate the transport process of heat from a heat source consisting only longitudinal optical (LO) phonon in Bulk and SOI Fin structures. The calculation results show that the heat transport from the Fin to the Si substrate is delayed when the buried oxide (BOX) layer exists even if the thickness is only one atomic layer. The kinetic energy distributions of LO and longitudinal acoustic (LA) phonons in SOI Fin structures are extracted from the MD simulations, and the result suggests that the heat transport process is impeded since acoustic phonon stays near the SiO2/Si interface. That is, the retarded heat is an unavoidable in a SOI Fin, a nanowire, or any channel structure confined in an insulating material. Having a heat duct in a device can be effective to avoid the self-heating problem for advanced transistor structures.
KW - Fin stuructures
KW - Molecular dynamics simulations
KW - Nanowires
KW - Phonons
KW - SOI
KW - Self-heating effect
UR - http://www.scopus.com/inward/record.url?scp=85088045025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85088045025&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85088045025
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 59
EP - 62
BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
Y2 - 5 September 2012 through 7 September 2012
ER -