Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi; I. Ohdomari; T. Watanabe; Y. Kamakura; K. Taniguchi

doi:10.1109/SISPAD.2010.5604568

Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

T. Zushi^*, I. Ohdomari, T. Watanabe, Y. Kamakura, K. Taniguchi

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

抄録

A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO₂ films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

本文言語	English
ホスト出版物のタイトル	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
ページ	73-76
ページ数	4
DOI	https://doi.org/10.1109/SISPAD.2010.5604568
出版ステータス	Published - 2010
イベント	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy 継続期間: 2010 9月 6 → 2010 9月 8

出版物シリーズ

名前	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
国/地域	Italy
City	Bologna
Period	10/9/6 → 10/9/8

ASJC Scopus subject areas

電子工学および電気工学
コンピュータサイエンスの応用
モデリングとシミュレーション

文献へのアクセス

10.1109/SISPAD.2010.5604568

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引用スタイル

Zushi, T., Ohdomari, I., Watanabe, T., Kamakura, Y., & Taniguchi, K. (2010). Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 73-76). 記事 5604568 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604568

Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. / Zushi, T.; Ohdomari, I.; Watanabe, T. その他.
15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 73-76 5604568 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

研究成果: Conference contribution

Zushi, T, Ohdomari, I, Watanabe, T, Kamakura, Y & Taniguchi, K 2010, Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. in 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010., 5604568, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 73-76, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, Italy, 10/9/6. https://doi.org/10.1109/SISPAD.2010.5604568

Zushi T, Ohdomari I, Watanabe T, Kamakura Y, Taniguchi K. Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 73-76. 5604568. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2010.5604568

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title = "Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films",

abstract = "A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.",

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T1 - Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

AU - Zushi, T.

AU - Ohdomari, I.

AU - Watanabe, T.

AU - Kamakura, Y.

AU - Taniguchi, K.

PY - 2010

Y1 - 2010

N2 - A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

AB - A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.

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T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

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BT - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010

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Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

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出版物シリーズ

Conference

ASJC Scopus subject areas

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