TY - GEN
T1 - MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm
AU - Sato, Tomonari
AU - Mitsuhara, Manabu
AU - Kakitsuka, Takaaki
AU - Kondo, Yasuhiro
PY - 2007
Y1 - 2007
N2 - We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.
AB - We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.
UR - http://www.scopus.com/inward/record.url?scp=34748920723&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34748920723&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2007.381203
DO - 10.1109/ICIPRM.2007.381203
M3 - Conference contribution
AN - SCOPUS:34748920723
SN - 142440875X
SN - 9781424408757
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 380
EP - 383
BT - IPRM'07
T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Y2 - 14 May 2007 through 18 May 2007
ER -