Nano-scalc smoothing of double layer porous Si substrates for detaching and fabricating low cost, high efficiency monocrystalline thin film Si solar cell by zone heating recrystallization

Chiaki Takazawa, Makoto Fujita, Kei Hasegawa, Anatolli Lukianov, Xiaomei Zhang, Suguru Noda, Manabu Ihara

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A fabrication process of monocrystalline thin films for Si solar cells was developed that uses epitaxial growth and layer transfer process for low fabrication cost and high photoelectric conversion efficiency. Fabrication of high crystalline epitaxial thin films requires controlling the surface roughness and pore size of the seed layer in nano-level, double layer porous Si (DLPS). By using this zone heating recrystallization (ZHR) method, in which the top surface of DLPS is selectively annealed by scanning upper lamp heater, we successfully reduced the surface roughness and pore size. By using the rapid vapor deposition (RVD) method, we fabricated an epitaxial monocrystalline Si thin film in 1 mm on the ZHR-treated DLPS and then easily detached this thin film from the substrate. The crystal distortion of epitaxial Si thin films can be controlled by using ZHR to smooth and change only the top surface of DLPS.

本文言語English
ホスト出版物のタイトルPhotovoltaics for the 21st Century 12
編集者M. Tao, J. Fenton, J.-Y. Lee, P. J. Kulesza, M. J. Ko, J.-J. Lee, R. Subramanian, N. G. Park, H. S. Jung, J. H. Noh, S. Hayase, T. Miyasaka, H. Segawa, H. Hamada
出版社Electrochemical Society Inc.
ページ11-23
ページ数13
31
ISBN(電子版)9781607687801
DOI
出版ステータスPublished - 2016
イベントSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10月 22016 10月 7

出版物シリーズ

名前ECS Transactions
番号31
75
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on Photovoltaics for the 21st Century 12 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

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