抄録
A discussion about the performance of a nanometer-scale switch that uses a copper sulfide film was presented. The nanometer-scale switch consists of a copper sulfide film, which was a chalcogenide semiconductor, sandwiched between copper and metal electrodes. It was found that these switches were advantageous for nan-volatile memory elements due to their simple structure, scalability and low voltage operations.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3032-3034 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 82 |
| 号 | 18 |
| DOI | |
| 出版ステータス | Published - 2003 5月 5 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）