抄録
GalnAs-AlInAs multiquantum well (MQW) lasers were successfully fabricated by molecular beam epitaxy (MBE) on InP substrates. Room-temperature CW operation of ridge-type stripe MQW lasers was confirmed in the 1.55 μm wavelength range. Spectral behaviors of the MQW lasers were investigated from the standpoint of the linewidth and chirping characteristics for the first time. An obtained minimum value of the spectral linewidth was as narrow as 2.5 MHz at an output power of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5 A chirp width was observed at 1 GHz direct modulation with a modulation depth of 67 percent.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1376-1380 |
| ページ数 | 5 |
| ジャーナル | IEEE Journal of Quantum Electronics |
| 巻 | 25 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 1989 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 原子分子物理学および光学
- 凝縮系物理学
- 電子工学および電気工学