Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki; T. Yokoya; J. Nakamura; N. Yamada; T. Nakamura; T. Muro; Y. Tamenori; T. Matsushita; Y. Takata; T. Tokushima; S. Shin; Y. Takano; M. Nagao; T. Takenouchi; H. Kawarada; T. Oguchi

doi:10.1016/j.jpcs.2008.06.006

Near E_F electronic structure of heavily boron-doped superconducting diamond

H. Okazaki^*, T. Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (T_c=7.2 K) in order to study the electronic structure near the Fermi level (E_F). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that E_F is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at E_F were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

本文言語	English
ページ（範囲）	2978-2981
ページ数	4
ジャーナル	Journal of Physics and Chemistry of Solids
巻	69
号	12
DOI	https://doi.org/10.1016/j.jpcs.2008.06.006
出版ステータス	Published - 2008 12月

ASJC Scopus subject areas

化学 (全般)
材料科学（全般）
凝縮系物理学

文献へのアクセス

10.1016/j.jpcs.2008.06.006

他のファイルとリンク

引用スタイル

Okazaki, H., Yokoya, T., Nakamura, J., Yamada, N., Nakamura, T., Muro, T., Tamenori, Y., Matsushita, T., Takata, Y., Tokushima, T., Shin, S., Takano, Y., Nagao, M., Takenouchi, T., Kawarada, H., & Oguchi, T. (2008). Near E_F electronic structure of heavily boron-doped superconducting diamond. Journal of Physics and Chemistry of Solids, 69(12), 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006

Okazaki, H, Yokoya, T, Nakamura, J, Yamada, N, Nakamura, T, Muro, T, Tamenori, Y, Matsushita, T, Takata, Y, Tokushima, T, Shin, S, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2008, 'Near E_F electronic structure of heavily boron-doped superconducting diamond', Journal of Physics and Chemistry of Solids, vol. 69, no. 12, pp. 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006

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abstract = "We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown",

keywords = "C. Photoelectron spectroscopy, D. Electronic structure, D. Fermi surface, D. Superconductivity",

author = "H. Okazaki and T. Yokoya and J. Nakamura and N. Yamada and T. Nakamura and T. Muro and Y. Tamenori and T. Matsushita and Y. Takata and T. Tokushima and S. Shin and Y. Takano and M. Nagao and T. Takenouchi and H. Kawarada and T. Oguchi",

note = "Funding Information: This study was supported by CREST and Grants-in-Aid for Exploratory Research (17654070) from Japan Society for the Promotion of Science. The PES measurements at SPring-8 were performed under a Proposal number J04B25SU-0523N. ",

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doi = "10.1016/j.jpcs.2008.06.006",

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T1 - Near EF electronic structure of heavily boron-doped superconducting diamond

AU - Okazaki, H.

AU - Yokoya, T.

AU - Nakamura, J.

AU - Yamada, N.

AU - Nakamura, T.

AU - Muro, T.

AU - Tamenori, Y.

AU - Matsushita, T.

AU - Takata, Y.

AU - Tokushima, T.

AU - Shin, S.

AU - Takano, Y.

AU - Nagao, M.

AU - Takenouchi, T.

AU - Kawarada, H.

AU - Oguchi, T.

N1 - Funding Information: This study was supported by CREST and Grants-in-Aid for Exploratory Research (17654070) from Japan Society for the Promotion of Science. The PES measurements at SPring-8 were performed under a Proposal number J04B25SU-0523N.

PY - 2008/12

Y1 - 2008/12

N2 - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

AB - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

KW - C. Photoelectron spectroscopy

KW - D. Electronic structure

KW - D. Fermi surface

KW - D. Superconductivity

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