A two-dimensional position sensitive silicon detector (PSSD) with a good linear response, consisting of a square ion-implanted resistive anode with a boundary of an additional resistive-strip electrode, was newly developed. Linearity and resolution for the PSSD were investigated using 40 MeV helium and 95 MeV nitrogen ion beams. The PSSD has an effective area of 45 mm×45 mm, a thickness of 400 μm, a junction capacitance of 500 pF, a surface resistance of the ion-implanted resistive anode of 18 kω□ and a resistance of the strip line of 1.4 kω. The nonlinearities and resolutions (FWHM) of the position were 0.75% and 1.97 mm for 40 MeV helium ions obtained by 6 μs pulse shaping, and 0.47% and 0.71 mm for 95 MeV nitrogen ions obtained by 12 μs pulse shaping, respectively.
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