抄録
A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In//0//. //5//3Ga//0//. //4//7As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 multiplied by 10** minus **4Acm** minus **2 at 0. 9 V//B is achieved. When illuminating with 1. 15 mu m light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 179-181 |
| ページ数 | 3 |
| ジャーナル | Electron device letters |
| 巻 | EDL-2 |
| 号 | 7 |
| 出版ステータス | Published - 1981 7月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）