TY - JOUR
T1 - Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
N1 - Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 1996/7
Y1 - 1996/7
N2 - We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.
AB - We performed the nitridation of (001) GaAs surfaces using nitrogen molecules (N 2 ) cracked by a hot tungsten filament. After nitridation of a GaAs surface at 620°C for 90 min, the [110] RHEED pattern shows the mixed spotty pattern of GaAs and GaN, while the [110] RHEED pattern shows a streak pattern with the spacing of a GaAs lattice. The nitridation rate is independent of the substrate temperature below 530°C. Above 590°C, N 2 desorbs from the surface during nitridation. This desorption rate of N 2 from the nitrided GaAs surface is the smallest among those of column V molecules in InAs, InP, GaAs and GaP, due to the large standard heat of formation for GaN.
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U2 - 10.1016/0169-4332(96)00308-X
DO - 10.1016/0169-4332(96)00308-X
M3 - Article
AN - SCOPUS:0030564401
SN - 0169-4332
VL - 100-101
SP - 403
EP - 406
JO - Applied Surface Science
JF - Applied Surface Science
ER -