TY - JOUR
T1 - No spin polarization of carriers in InGaN
AU - Tackeuchi, A.
AU - Kuroda, T.
AU - Shikanai, A.
AU - Sota, T.
AU - Kuramata, A.
AU - Domen, K.
N1 - Funding Information:
A. Tackeuchi and T. Kuroda thank Dr. S. Adachi and Professor Y. Takagi of the Himeji Institute of Technology for their useful comments on femtoseconds pulse generation. This work was supported in part by a Grant-in-Aid for Scientific Research of Priority Areas, “Spin Controlled Semiconductor Nanostructures” from the Ministry of Education, Science, Sports and Culture. A.T. and T.K. acknowledge the support of Sumitomo Foundation, Hewlett-Packard Japan Ltd., and a Waseda University Grant for Special Research Projects.
PY - 2000/5
Y1 - 2000/5
N2 - We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.
AB - We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.
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U2 - 10.1016/S1386-9477(00)00106-5
DO - 10.1016/S1386-9477(00)00106-5
M3 - Conference article
AN - SCOPUS:0033726226
SN - 1386-9477
VL - 7
SP - 1011
EP - 1014
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 3
T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures
Y2 - 12 July 1999 through 16 July 1999
ER -