The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of PL in InGaN MQW obtained using the upconversion method was very fast, below ips, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The OD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 4ops after pulsed photo-pumping. Keywords: quantum confined stark effect, internal field, pump and probe measurement, upconversion method.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 2003 5月 30|
|イベント||Ultrafast Phenomena in Semiconductors VII 2003 - San Jose, United States|
継続期間: 2003 1月 25 → 2003 1月 31
ASJC Scopus subject areas
- コンピュータ サイエンスの応用