TY - JOUR
T1 - Nonlinear optical dynamics in GaN and related materials
AU - Shikanai, A.
AU - Hazu, K.
AU - Sota, T.
AU - Suzuki, K.
AU - Kawakami, Y.
AU - Fujita, Sg
N1 - Funding Information:
cooperation in white-light pump and probe measurement, Professor A. Tackeuchi, Waseda University, Professor M. Funato, Kyoto University, and Professor A. Adachi, Hokkaido University for their continuous encouragement. The financial support of Konica Imaging Science Foundation is acknowledged.
Publisher Copyright:
© 2003 SPIE. All rights reserved.
PY - 2003/5/30
Y1 - 2003/5/30
N2 - The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of PL in InGaN MQW obtained using the upconversion method was very fast, below ips, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The OD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 4ops after pulsed photo-pumping. Keywords: quantum confined stark effect, internal field, pump and probe measurement, upconversion method.
AB - The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of PL in InGaN MQW obtained using the upconversion method was very fast, below ips, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The OD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 4ops after pulsed photo-pumping. Keywords: quantum confined stark effect, internal field, pump and probe measurement, upconversion method.
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U2 - 10.1117/12.473276
DO - 10.1117/12.473276
M3 - Conference article
AN - SCOPUS:85076813062
SN - 0277-786X
VL - 4992
SP - 209
EP - 216
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Ultrafast Phenomena in Semiconductors VII 2003
Y2 - 25 January 2003 through 31 January 2003
ER -