@article{1842ec8d798044999939b475d0bfa50a,
title = "Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate",
abstract = "The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.",
author = "H. Takei and T. Suzuki and T. Katsufuji",
note = "Funding Information: This work was supported by Major Science and Technology Program for Water Pollution Control and Treatment (No. 2010ZX07212-007) and the National Natural Science Foundation of China (Grant Nos. 51422813 and 512218920). Moreover, the author Ruiping Liu gratefully acknowledges the support of Beijing Nova Program - 'China' (2013054).",
year = "2007",
doi = "10.1063/1.2771041",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}